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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2000.12
- 수록면
- 120 - 123 (4page)
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초록· 키워드
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Co-Ni-Fe-N thin films were fabricated by a N₂ reactive rf magnetron sputtering method. The nitrogen partial pressure (P_(N2)) was varied in the range 0~10%. As P_(N2) increases in this range, the saturation magnetization (Bs) linearly decreases from 19.8 kG to 14 kG and the electrical resistivity (ρ) increases from 27 to 155 μΩ㎝. The coercivity (Hc) exhibits the minimum value at 4% P_(N2). The magnetic anisotropy fields (Hk) are in the range of 20~50 Oe. High frequency characteristics of films are excellent in the range of 3~5% of P_(N2). In particular, the effective permeability of the film fabricated at 4% P_(N2) is 800, which is maintained up to 600 ㎒. This film also shows Bs of 17.5 kG, Hc of 1.4 Oe, resistivity of 98 μΩ㎝ and H_k of about 25 Oe. Also, the corrosion resistance of (CO_(22.2)Ni_(27.6)Fe_(50.2))_(100-x)Nx films was improved with increasing N concentration.
목차
Abstract
1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2009-428-015128393