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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2003.3
- 수록면
- 32 - 35 (4page)
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초록· 키워드
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Magnetic Tunnel Junctions (MTJs) were fabricated on thermally oxidized Si (100) wafers using DC magnetron sputtering. The film structures were Ta(50 Å)/Cu(100 Å)/Ta(50 Å)/Ni_(80)Fe_(20)(20 Å)/Cu(50 Å)/Mn_(75)Ir_(25)(100 Å)/Co_(70)Fe_(30)(25 Å)/Al-O(15 Å)/Co_(70)Fe_(30)(25 Å)/Ni_(80)Fe_(20)(t)/Ta(50 Å), with t = 0 Å, 100 and 1000 Å, respectively. X-ray diffraction has shown improvement of (111) texture of IrMn₃ and Cu by annealing. The exchange-biased energy is almost inversely proportional to temperature. The difference between the coercivity Hc and the exchange biased field H_E for t = 0 Å sample is smaller than that for t = 1000 Å. For the pinned layer, the decreasing rate of the coercivity with the temperature is higher compared to that of the exchange field, but variation of Hc is similar to that of the exchange field for free layer.
목차
Abstract
1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusion
References
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UCI(KEPA) : I410-ECN-0101-2009-428-015148682