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- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.8 No.1
- 발행연도
- 2008.3
- 수록면
- 51 - 65 (15page)
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The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. FERROELECTRIC SWITCHING
Ⅲ. FERROELECTRIC MEMORY STRUCTURES
Ⅳ. FERROELECTRIC FIELD EFFECT TRANSISTOR MEMORY
Ⅴ. INORGANIC FEFETS
Ⅵ. POLYMER FEFETS
Ⅶ. FERROELECTRIC POLYMERS
Ⅷ. THIN FILM FABRICATION OF FERROELECTRIC POLYMERS
Ⅸ. RECENT DEVELOPMENT IN POLYMER FERROELECTRIC MEMORIES
Ⅹ. CHALLENGES FOR MATERIAL DESIGN
XI. SUMMARY AND OUTLOOK
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (60)
참고문헌 신청
1. [학술지(정기간행물)] - S. Ducharme / 2005 / Ferroelectric polymer Langmuire- Blodgett films for nonvolatile memory applications / IEEE Transaction on Device and Materials Reliability 5 (4) : 720 ~ 735
2. [학술지(정기간행물)] - N. Setter / 2006 / Ferroelectric thin films: review of materials, properties, and applications / Journal of Applied Physics 100
3. [학술지(정기간행물)] - A. Sheikholeslami / 2000 / A Survey of circuit innovations in ferroelectric random-access memories / Proceedings of the IEEE 88 (5) : 667 ~ 689
4. [학술대회논문] - T. Sumi / 1994 / A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns / Digest of Technological Paper - IEEE International Solid-State Circuits Conference : 268 ~ 269
5. [학술대회논문] - S. S. Eaton / 1988 / A ferroelectric nonvolatile memory / Digest of Technological Paper - IEEE International Solid-State Circuits Conference : 130 ~ 131
2. [학술지(정기간행물)] - N. Setter / 2006 / Ferroelectric thin films: review of materials, properties, and applications / Journal of Applied Physics 100
3. [학술지(정기간행물)] - A. Sheikholeslami / 2000 / A Survey of circuit innovations in ferroelectric random-access memories / Proceedings of the IEEE 88 (5) : 667 ~ 689
4. [학술대회논문] - T. Sumi / 1994 / A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns / Digest of Technological Paper - IEEE International Solid-State Circuits Conference : 268 ~ 269
5. [학술대회논문] - S. S. Eaton / 1988 / A ferroelectric nonvolatile memory / Digest of Technological Paper - IEEE International Solid-State Circuits Conference : 130 ~ 131
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