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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.11 No.1
- 발행연도
- 2011.3
- 수록면
- 40 - 50 (11page)
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A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the shortchannel device has been obtained by solving the 2D Poisson’s equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson’s equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available ATLAS™ 2D device simulator.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. DEVICE DETAILS
Ⅲ. THEORETICAL MODEL
Ⅳ. OUTLINE OF ATLAS™ SIMULATION
Ⅴ. RESULTS AND DISCUSSION
Ⅵ. CONCLUSIONS
REFERENCES
참고문헌 (43)
참고문헌 신청
1. [학술지(정기간행물)] - 아지스아브라함 / 200906 / MESFET DC model parameter extraction using Quantum Particle Swarm Optimization / Microelectronics Reliability 49 (6) : 660 ~ 666
2. [학술지(정기간행물)] - I. J.Bahl / 2008 / 2.8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology / IEEE Microwave and Wireless Components Lett 18 (1) : 52 ~ 54
3. [학술대회논문] - B. Y. Martynov / 2007 / Influence of Substrate Purity on MESFET Parameters / Proceedings of 17th International Crimean Conference on Microwave & Telecommunication Technology : 121 ~ 122
4. [학술지(정기간행물)] - I. J. Bahl / 2008 / L and S-Band Compact Octave Bandwidth 4-bit MMIC Phase Shifters / IEEE Trans. Microwave Theory Tech 56 (2) : 293 ~ 299
5. [학술지(정기간행물)] - V.Eveloy,H.Yu-Chul / 2007 / The Effect of Electrostatic Discharge on Electrical Overstress Susceptibility in a Gallium Arsenide MESFET-Based Device / Trans. on Dev. and Mater. Reliability 7 (1) : 200 ~ 208
2. [학술지(정기간행물)] - I. J.Bahl / 2008 / 2.8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology / IEEE Microwave and Wireless Components Lett 18 (1) : 52 ~ 54
3. [학술대회논문] - B. Y. Martynov / 2007 / Influence of Substrate Purity on MESFET Parameters / Proceedings of 17th International Crimean Conference on Microwave & Telecommunication Technology : 121 ~ 122
4. [학술지(정기간행물)] - I. J. Bahl / 2008 / L and S-Band Compact Octave Bandwidth 4-bit MMIC Phase Shifters / IEEE Trans. Microwave Theory Tech 56 (2) : 293 ~ 299
5. [학술지(정기간행물)] - V.Eveloy,H.Yu-Chul / 2007 / The Effect of Electrostatic Discharge on Electrical Overstress Susceptibility in a Gallium Arsenide MESFET-Based Device / Trans. on Dev. and Mater. Reliability 7 (1) : 200 ~ 208
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