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논문 기본 정보

자료유형
학술저널
저자정보
Hiroyuki Tomita (Osaka University) Hiroki Maehara (Canon ANELVA) Takayuki Nozaki (Osaka University) Yoshishige Suzuki (Osaka University)
저널정보
한국자기학회 Journal of Magnetics Journal of Magnetics Vol.16 No.2
발행연도
2011.6
수록면
140 - 144 (5page)

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초록· 키워드

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We report on a numerical calculation study of two new functional properties in magnetic tunnel junctions (MTJs), negative dynamic resistance and RF amplification. The magnetic dynamics in a conventional CoFeB/MgO/CoFeB MTJ with in-plane magnetization was investigated using a macro-spin model simulation. To examine the influence of thermal fluctuations, random external magnetic fields were also included. Using a voltage controlled bias circuit, the negative dynamic resistance was obtained from time averaged Ⅰ-Ⅴ characteristics at both 0 K and 300 K under appropriate external magnetic fields and bias voltages. Using this negative dynamic resistance property, we demonstrated RF amplification with a 100 ㎒ high frequency signal. Sizable RF amplification gain was observed without thermal fluctuation. However, at 300 K, the RF signal was not amplified because low frequency magnetization dynamics were dominant.

목차

1. Introduction
2. The Mechanism of Negative Dynamic Resistance and Amplification
3. Calculation Method
4. Results and Discussion
5. Conclusion
Acknowledgements
References

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UCI(KEPA) : I410-ECN-0101-2013-428-000554253