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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.12 No.3
- 발행연도
- 2012.9
- 수록면
- 353 - 359 (7page)
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초록· 키워드
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A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a 0.35 μm 18 V CMOS technology. The proposed architecture shows 1.6 V ~ 3.5 V higher output voltage compared with the previously reported architecture.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. PREVIOUS CHARGE PUMP
Ⅲ. PROPOSED CHARGE PUMP
Ⅳ. RESULTS
Ⅴ. CONCLUSIONS
ACKNOWLEDGMENTS
REFERENCES
참고문헌 (8)
참고문헌 신청
1. [학술지(정기간행물)] - John F. Dickson / 1976 / On-Chip High-Voltage Generation in MNOS Integrated Circuits Using an Improved Voltage Multiplier Technique / Solid- State Circuits, IEEE Journal of 11 (3) : 374 ~ 378
2. [학술지(정기간행물)] - Jieh-Tsorng Wu / 1998 / MOS Charge Pumps for Low-Voltage Operation / Solid- State Circuits, IEEE Journal of 33 (3) : 592 ~ 597
3. [학술지(정기간행물)] - Roberto Pelliconi / 2003 / Power Efficient Charge Pump in Deep Submicron Standard CMOS Technology / Solid-State Circuits, IEEE Journal of 38 (6) : 1068 ~ 1071
4. [학술지(정기간행물)] - Ming-Dou ker / 2006 / Design of Charge Pump Circuit withConsideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes / Solid-State Circuits,IEEE Journal of 41 (5) : 1100 ~ 1107
5. [학술지(정기간행물)] - Kyeong-Pil Kang / 2006 / Charge Pump Circuits with Low Area and High Power Efficiency for Memory Applications / Semiconductor Technology and Science, Journal of 6 (4) : 257 ~ 263
2. [학술지(정기간행물)] - Jieh-Tsorng Wu / 1998 / MOS Charge Pumps for Low-Voltage Operation / Solid- State Circuits, IEEE Journal of 33 (3) : 592 ~ 597
3. [학술지(정기간행물)] - Roberto Pelliconi / 2003 / Power Efficient Charge Pump in Deep Submicron Standard CMOS Technology / Solid-State Circuits, IEEE Journal of 38 (6) : 1068 ~ 1071
4. [학술지(정기간행물)] - Ming-Dou ker / 2006 / Design of Charge Pump Circuit withConsideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes / Solid-State Circuits,IEEE Journal of 41 (5) : 1100 ~ 1107
5. [학술지(정기간행물)] - Kyeong-Pil Kang / 2006 / Charge Pump Circuits with Low Area and High Power Efficiency for Memory Applications / Semiconductor Technology and Science, Journal of 6 (4) : 257 ~ 263
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