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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2013.2
- 수록면
- 19 - 24 (6page)
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초록· 키워드
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As CMOS technology is scaled down more aggressively, the reliability mechanism (or aging effect) caused by the diffusion of metal atoms along the conductor in the direction of the electron flow, also called electromigration (EM), has become a major reliability concern. With the present of EM, it is difficult to control the current flows of the MOSFET device and interconnect. In addition, nanoscale CMOS circuits suffer from increased gate leakage current and power consumption. In this paper, the EM effects on current of the nanoscale CMOS circuits are analyzed. Finally, this paper introduces an on-chip current measurement method providing lifetime electromigration management which are designed using 45-nm CMOS predictive technology model.
목차
Abstract
1. Introduction
2. Electromigration(EM)
3. EM Analysis
4. Proposed EM sensor circuit
5. Simulation Results
6. Conclusion
References
참고문헌 (10)
참고문헌 신청
3. [학술대회논문] - A. B. Kahng / 2007 / Design challenges at 65nm and beyond / Proceeding of IEEE DATE Conference : 1 ~ 2
4. [학술지(정기간행물)] - 김연보 / 2012 / The Impact of TDDB Failure on Nanoscale CMOS Digital Circuits / 한국산업정보학회논문지 17 (3) : 27 ~ 34
5. [학술지(정기간행물)] - A. B. Kahng / 2007 / Design challenges at 65nm and beyond / IEEE DATE : 1 ~ 2
6. [학술대회논문] - J. W. McPherson / 2006 / Reliability challenges for 45nm and beyond / IEEE Design Auto-mation Conference : 176 ~ 181
7. [인터넷자원] - D. Rittman / / Nanometer Reliability
4. [학술지(정기간행물)] - 김연보 / 2012 / The Impact of TDDB Failure on Nanoscale CMOS Digital Circuits / 한국산업정보학회논문지 17 (3) : 27 ~ 34
5. [학술지(정기간행물)] - A. B. Kahng / 2007 / Design challenges at 65nm and beyond / IEEE DATE : 1 ~ 2
6. [학술대회논문] - J. W. McPherson / 2006 / Reliability challenges for 45nm and beyond / IEEE Design Auto-mation Conference : 176 ~ 181
7. [인터넷자원] - D. Rittman / / Nanometer Reliability
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