지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
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A one-step route was developed to fabricate Cu(In,Ga)Se<SUB>2</SUB> (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary CuIn<SUB>0.75</SUB>Ga<SUB>0.25</SUB>Se<SUB>2</SUB> target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at 300℃ and 400℃ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at 300℃ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.
목차
Abstract
1. 서론
2. 실험방법
3. 결과 및 고찰
4. 결론
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UCI(KEPA) : I410-ECN-0101-2014-580-002569140