지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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Low-noise amplifier(LNA) is a component that amplifies the signal while lowering the noise figure of high-frequency signal. LNA holds a very important position in RF system so that it is widely used for telecommunication. Electro static discharge(ESD) is the most common cause of malfunction for low-powered components, such as Large Scale Integration and IC type LNA is weak in ESD. This thesis studies static effect of communication LNA. It analyzes ESD effect, which occurs within LNA circuit, and describes testing standard and methods. In order to find out LNA"s susceptiblity to electro static, two well-recognized communication IC type LNA models were selected to be tested. Then static-induced malfunction was carefully analyzed and it suggests architectural problem and improvement from the LNA"s ESD point of view.
목차
Abstract
1. 서론
2. 집적회로에서의 정전기 영향
3. 정전기 시험 규격 및 시험 방법
4. 정전기 시험 결과
5. 정전기 대책
6. 결론
참고문헌
참고문헌 (12)
참고문헌 신청
1. [학술지(정기간행물)] - / 1997 / 정전기 방전에 의한 전자계 복사의 특성 해석 / 전자공학회논문지 34 (12)
2. [학술대회논문] - T. Green / 1998 / A Review of EOS/ESD Field Failure in Military Equipment / 10th EOS/ESD symposium
3. [학술지(정기간행물)] - D.C. Wunsch / 1968 / Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages / Nuclear and Plasma Sciences Society 15 : 244 ~
4. [학술지(정기간행물)] - James E. Vinson / 1998 / Electrostatic Discharge in Semiconductor Devices / IEEE 86 : 399 ~ 420
5. [학술지(정기간행물)] - S. U. Kim / 1992 / ESD Induced Gate Oxide Damage During Wafer Fabrication Process / EOS/ESD symposium EOS-14 : 99 ~ 105
2. [학술대회논문] - T. Green / 1998 / A Review of EOS/ESD Field Failure in Military Equipment / 10th EOS/ESD symposium
3. [학술지(정기간행물)] - D.C. Wunsch / 1968 / Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse Voltages / Nuclear and Plasma Sciences Society 15 : 244 ~
4. [학술지(정기간행물)] - James E. Vinson / 1998 / Electrostatic Discharge in Semiconductor Devices / IEEE 86 : 399 ~ 420
5. [학술지(정기간행물)] - S. U. Kim / 1992 / ESD Induced Gate Oxide Damage During Wafer Fabrication Process / EOS/ESD symposium EOS-14 : 99 ~ 105
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UCI(KEPA) : I410-ECN-0101-2014-320-003272913