지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.13 No.4
- 발행연도
- 2013.8
- 수록면
- 342 - 354 (13page)
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초록· 키워드
오류제보하기
The aim of this work is to investigate and study the quantum effects in the modeling of nanosclae symmetric double-gate InAIAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths (L<SUB>g</SUB> 100 ㎚ and 50㎚, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The tow triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanosclae heterostructure device modeling.
목차
Abstract
Ⅰ. INTRODUCTION
Ⅱ. METHOD
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSIONS
REFERENCES
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UCI(KEPA) : I410-ECN-0101-2014-560-002404882