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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.14 No.5
- 발행연도
- 2014.10
- 수록면
- 543 - 548 (6page)
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In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulatormetal (MIM) capacitors using Al₂O₃-HfO₂-Al₂O₃ and SiO₂-HfO₂-SiO₂ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. RESULT AND DISCUSSION
IV. CONCLUSIONS
REFERENCES
참고문헌 (12)
참고문헌 신청
1. [학술지(정기간행물)] - C. C Huang / 2007 / Leakage Current Improvement of Ni/TiNiO/TaN Metal-Insulator-Metal Capacitors using Optimized N+ Plasma Treatment and Oxygen Annealing / Electrochemical and Solid-State Letters 10 (10) : H287 ~ H290
2. [학술지(정기간행물)] - V. Mikhelashvili / 2007 / High capacitance density metal-insulator-metal structure based on Al2O3-HfTiO nanalaminate stacks / Appl. Phys. Lett. 90 (1) : 1 ~ 3
3. [학술지(정기간행물)] - H. Hu / 2003 / Physical and elecrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications / J. Appl. Phys 94 (1) : 551 ~ 557
4. [학술대회논문] - T. Remmel / 2003 / Leakage Behavior and Reliability Assessment of Tantalum Oxide Dielectric MIM Capacitors / Proc. Int. Reliability Physics Symp. : 277 ~ 281
5. [학술지(정기간행물)] - X. Yu / 2003 / A highdensity MIM capacitor (13fF/μm2) using ALD HfO2 dielectrics / IEEE Electron Device Lett. 24 (2) : 63 ~ 65
2. [학술지(정기간행물)] - V. Mikhelashvili / 2007 / High capacitance density metal-insulator-metal structure based on Al2O3-HfTiO nanalaminate stacks / Appl. Phys. Lett. 90 (1) : 1 ~ 3
3. [학술지(정기간행물)] - H. Hu / 2003 / Physical and elecrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications / J. Appl. Phys 94 (1) : 551 ~ 557
4. [학술대회논문] - T. Remmel / 2003 / Leakage Behavior and Reliability Assessment of Tantalum Oxide Dielectric MIM Capacitors / Proc. Int. Reliability Physics Symp. : 277 ~ 281
5. [학술지(정기간행물)] - X. Yu / 2003 / A highdensity MIM capacitor (13fF/μm2) using ALD HfO2 dielectrics / IEEE Electron Device Lett. 24 (2) : 63 ~ 65
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