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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2016.1
- 수록면
- 362 - 373 (12page)
이용수
초록· 키워드
오류제보하기
The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (uEe) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.
목차
Abstract
I. INTRODUCTION
II. THE COLLECTOR CURRENTMEASURING CIRCUIT AND ITS PRINCIPLE
III. EXPERIMENTAL STUDY OF IGBT COLLECTOR CURRENT ONLINE MEASUREMENT
IV. CONCLUSION
REFERENCES
참고문헌 (26)
참고문헌 신청
[학술지(정기간행물)] - C. Sun / 2012 / A practical high-speed fiber ring net topology and protocol for large-capacity power electronic systems / Proceedings of the CSEE 32 (2) : 63 ~ 73
[학술지(정기간행물)] - R. S. Chokhawala / 1995 / Gate drive considerations for IGBT modules / IEEE Trans. Ind. Appl. 31 (3) : 603 ~ 611
[학술지(정기간행물)] - V. John / 1999 / High performance active gate drive for high power IGBTs / IEEE Trans. Ind. Appl 35 (5) : 1108 ~ 1117
[학술지(정기간행물)] - D. Bortis / 2009 / Double-stage gate drive circuit for parallel connected IGBT modules / IEEE Trans. Dielectr. Electr. Insul 16 (4) : 1020 ~ 1027
[학술대회논문] - P. Shihong / 2001 / Flexible dv/dt and di/dt control method for insulated gate power switches / Industry Applications Conference, 36th IAS Meeting 2 : 1038 ~ 1045
[학술지(정기간행물)] - R. S. Chokhawala / 1995 / Gate drive considerations for IGBT modules / IEEE Trans. Ind. Appl. 31 (3) : 603 ~ 611
[학술지(정기간행물)] - V. John / 1999 / High performance active gate drive for high power IGBTs / IEEE Trans. Ind. Appl 35 (5) : 1108 ~ 1117
[학술지(정기간행물)] - D. Bortis / 2009 / Double-stage gate drive circuit for parallel connected IGBT modules / IEEE Trans. Dielectr. Electr. Insul 16 (4) : 1020 ~ 1027
[학술대회논문] - P. Shihong / 2001 / Flexible dv/dt and di/dt control method for insulated gate power switches / Industry Applications Conference, 36th IAS Meeting 2 : 1038 ~ 1045
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UCI(KEPA) : I410-ECN-0101-2016-560-002315504