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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2015.12
- 수록면
- 116 - 120 (5page)
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초록· 키워드
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A hybrid transparent conducting layer was applied for Si photodetector. To realize the hybrid transparent conducting layer, a 200 nm-thick ITO layer was deposited onto a Si substrate, following by a solution-processed AgNWs-coating on the ITO. The hybrid transparent conducting layer showed an excellent low electric resistance of 15.9 □/Ω with a high optical transparency of 86.89%. Due to these optical and electrical benefits, the hybrid transparent conductor-embedding Si diode provides an extremely high rectifying ratio of 3386. Under light-illumination, the hybrid transparent conductor device provides extremely high photoresponses for broad wavelengths. This implies that a functional design for hybrid transparent conductor is crucial for photoelectric devices and applications.
목차
ABSTRACT
1. Introduction
2. Experimental Procedures
3. Results and Discussion
4. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2016-563-002207526