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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE Journal of Semiconductor Technology and Science Vol.16 No.5
- 발행연도
- 2016.10
- 수록면
- 695 - 701 (7page)
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초록· 키워드
오류제보하기
Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with 2° offcut towards 〈110〉 at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as 9×10<SUP>17</SUP> cm<SUP>-3</SUP>. In addition, the reduction of GaSb lattice parameter with Be doping was studied.
목차
Abstract
I. INTRODUCTION
II. EXPERIMENT
III. RESULTS AND DISCUSSION
IV. SUMMARY AND CONCLUSIONS
REFERENCES
참고문헌 (18)
참고문헌 신청
[학술지(정기간행물)] - R. A. Hogg / 1998 / Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy / Appl. Phys. Lett 72 (22) : 2856 ~ 2858
[학술지(정기간행물)] - L. Müller-Kirsch / 2001 / Temporal evolution of GaSb/GaAs quantum dot formation / Appl. Phys. Lett 79 (7) : 1027 ~ 1029
[학술지(정기간행물)] - Y. B. Li / 2011 / Electron mobility in modulation-doped AlSb/InAs quantum wells / J. Appl. Phys 109 : 073703 ~
[학술지(정기간행물)] - H. K. Lin / 2010 / Ebeam-evaporated Al2O3 for InAs/AlSb metaloxide-semiconductor HEMT development / Solid-State Electron 54 : 505 ~ 508
[학술지(정기간행물)] - O. Cathabard / 2010 / Quantum cascade lasers emitting near 2. 6μm / Appl. Phys. Lett 96 : 141110 ~
[학술지(정기간행물)] - L. Müller-Kirsch / 2001 / Temporal evolution of GaSb/GaAs quantum dot formation / Appl. Phys. Lett 79 (7) : 1027 ~ 1029
[학술지(정기간행물)] - Y. B. Li / 2011 / Electron mobility in modulation-doped AlSb/InAs quantum wells / J. Appl. Phys 109 : 073703 ~
[학술지(정기간행물)] - H. K. Lin / 2010 / Ebeam-evaporated Al2O3 for InAs/AlSb metaloxide-semiconductor HEMT development / Solid-State Electron 54 : 505 ~ 508
[학술지(정기간행물)] - O. Cathabard / 2010 / Quantum cascade lasers emitting near 2. 6μm / Appl. Phys. Lett 96 : 141110 ~
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UCI(KEPA) : I410-ECN-0101-2017-569-001646192