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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2017.5
- 수록면
- 601 - 609 (9page)
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초록· 키워드
오류제보하기
Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.
목차
Abstract
I. INTRODUCTION
II. ZERO-VOLTAGE SWITCHING NON-ISOLATED POINT-OF-LOAD CONVERTER
III. DESIGN CONSIDERATIONS OF ZVS POL CONVERTER
IV. EXPERIMENTAL SETUP AND RESULTS
V. CONCLUSIONS
REFERENCES
참고문헌 (22)
참고문헌 신청
[학술대회논문] - M. A. Khan / 2005 / New developments in gallium nitride and the impact on power electronics / Proc. IEEE Power Electron. Spec. Conf. : 15 ~ 26
[학술대회논문] - D. Reusch / 2015 / Improving high frequency dc-dc converter performance with monolithic half bridge GaN ICs / Proc. IEEE Energy Convers. Congr. and Expo. (ECCE) : 381 ~ 387
[학술지(정기간행물)] - S. Ji / 2013 / High-frequency high power density 3-D integrated gallium-nitride-based point of load module design / IEEE Trans. Power Electron. 28 (9) : 4216 ~ 4226
[학술지(정기간행물)] - Y. Su / 2013 / Design and evaluation of a high-frequency LTCC inductor substrate for a three-dimensional integrated dc/dc converter / IEEE Trans. Power Electron. 28 (9) : 4354 ~ 4364
[학술대회논문] - L. L. Jenkins / 2013 / The impact of parallel GaN HEMTs on efficiency of a 12-to-1 V buck converter / Proc. IEEE Wide Bandgap Power Devices and Applications (WiPDA) : 197 ~ 200
[학술대회논문] - D. Reusch / 2015 / Improving high frequency dc-dc converter performance with monolithic half bridge GaN ICs / Proc. IEEE Energy Convers. Congr. and Expo. (ECCE) : 381 ~ 387
[학술지(정기간행물)] - S. Ji / 2013 / High-frequency high power density 3-D integrated gallium-nitride-based point of load module design / IEEE Trans. Power Electron. 28 (9) : 4216 ~ 4226
[학술지(정기간행물)] - Y. Su / 2013 / Design and evaluation of a high-frequency LTCC inductor substrate for a three-dimensional integrated dc/dc converter / IEEE Trans. Power Electron. 28 (9) : 4354 ~ 4364
[학술대회논문] - L. L. Jenkins / 2013 / The impact of parallel GaN HEMTs on efficiency of a 12-to-1 V buck converter / Proc. IEEE Wide Bandgap Power Devices and Applications (WiPDA) : 197 ~ 200
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