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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 대한전자공학회 IEIE Transactions on Smart Processing & Computing IEIE Transactions on Smart Processing & Computing Vol.7 No.1
- 발행연도
- 2018.2
- 수록면
- 75 - 79 (5page)
- DOI
- 10.5573/IEIESPC.2018.7.1.075
이용수
초록· 키워드
오류제보하기
As complementary metal-oxide semiconductor (CMOS) technologies move to below 10 nm due to aggressive scaling, a new device structure is required to increase gate controllability for mitigating short- channel effects (SCEs). In this study, a 3D technology computer-aided design (TCAD) tool is used to analyze three different channel shapes of gateall- around (GAA) nanowires: circular, square, and trapezoidal. Simulation results show that the trapezoidal channel shape provides the maximum on-current from among the three shapes for the same cross-sectional area. In addition, the trapezoidal nanowire shows the minimum leakage current. In the trapezoidal shape, more benefits in both on- and offcurrent are expected when the ratio between top and bottom widths increases. Carrier density profiles in TCAD simulations reveal that the current variation is due to the channel shape and the electrical property of the channel.
목차
Abstract
1. Introduction
2. General Simulation Setup
3. Square vs. Trapezoidal Nanowires
4. Circular vs. Trapezoidal Nanowires
5. Conclusion
References
참고문헌 (10)
참고문헌 신청
[단행본] - Y. Taur / 2013 / Fundamental of Modern VLSI Devices / Cambridge Univ. Press
[학술지(정기간행물)] - R. Huang / 2009 / Challenges of 22 nm and beyond CMOS technology / Science in China Series F: information Sciences 52 (9) : 1491 ~ 1533
[단행본] - / / ITRS 2.0 2015, Beyond CMOS, [Online]
[학술지(정기간행물)] - D. E. Nikonov / 2013 / Overview of beyond-CMOS devices and a uniform methodology for their benchmarking / Proc. of IEEE 101 (12) : 2498 ~ 2533
[학술지(정기간행물)] - G. Larrieu / 2013 / Vertical nanowire array-based field effect transistors for ultimate scaling / Nanoscale 5 (6) : 2437 ~ 2441
[학술지(정기간행물)] - R. Huang / 2009 / Challenges of 22 nm and beyond CMOS technology / Science in China Series F: information Sciences 52 (9) : 1491 ~ 1533
[단행본] - / / ITRS 2.0 2015, Beyond CMOS, [Online]
[학술지(정기간행물)] - D. E. Nikonov / 2013 / Overview of beyond-CMOS devices and a uniform methodology for their benchmarking / Proc. of IEEE 101 (12) : 2498 ~ 2533
[학술지(정기간행물)] - G. Larrieu / 2013 / Vertical nanowire array-based field effect transistors for ultimate scaling / Nanoscale 5 (6) : 2437 ~ 2441
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