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논문 기본 정보

자료유형
학술저널
저자정보
Yitao Liu (Shenzhen University) Zhendong Song (Shenzhen University) Shan Yin (China Academy of Engineering Physics) Jianchun Peng (Shenzhen University) Hui Jiang (Shenzhen University)
저널정보
전력전자학회 JOURNAL OF POWER ELECTRONICS JOURNAL OF POWER ELECTRONICS Vol.19 No.2
발행연도
2019.3
수록면
591 - 601 (11page)

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초록· 키워드

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With the development of renewable energy, grid-connected inverter technology has become an important research area. When compared with traditional silicon IGBT power devices, the silicon carbide (SiC) MOSFET shows obvious advantages in terms of its high-power density, low power loss and high-efficiency power supply system. It is suggested that this technology is highly suitable for three-phase AC motors, renewable energy vehicles, aerospace and military power supplies, etc. This paper focuses on the SiC MOSFET behaviors that concern the parasitic component influence throughout the whole working process, which is based on a three-phase grid-connected inverter. A high-speed model of power switch devices is built and theoretically analyzed. Then the power loss is determined through experimental validation.

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Abstract
I. INTRODUCTION
II. PHYSICAL MODELING AND THEORETICAL ANALYSIS OF A SIC MOSFET
III. INFLUENCE OF THE PARASITIC PARAMETERS ON THE TRANSISTOR CURVE OSCILLATION
IV. THEORETICAL ANALYSIS OF THE POWER LOSS CALCULATION
V. EXPERIMENT RESULTS AND ANALYSIS
VI. CONCLUSION
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UCI(KEPA) : I410-ECN-0101-2019-560-000543188