메뉴 건너뛰기
Library Notice
Institutional Access
If you certify, you can access the articles for free.
Check out your institutions.
ex)Hankuk University, Nuri Motors
Log in Register Help KOR
Subject

Realistic Circuit Modeling Using Derating Factors for Triboelectric Nanogenerators in Energy Harvesting Applications
Recommendations
Search
Questions

논문 기본 정보

Type
Proceeding
Author
Bo-Kyung Yoon (Ulsan National Institute of Science and Technology) Jee-Hoon Jung (Ulsan National Institute of Science and Technology) Jeong Min Baik (Ulsan National Institute of Science and Technology) Katherine A. Kim (National Taiwan University)
Journal
THE KOREAN INSTITUTE OF POWER ELECTRONICS ICPE(ISPE)논문집 ICPE 2019-ECCE Asia SCOPUS
Published
2019.5
Pages
2,107 - 2,113 (7page)

Usage

cover
📌
Topic
📖
Background
🔬
Method
🏆
Result
Realistic Circuit Modeling Using Derating Factors for Triboelectric Nanogenerators in Energy Harvesting Applications
Ask AI
Recommendations
Search
Questions

Abstract· Keywords

Report Errors
As the internet of things (IoT) gains popularity, many sensors and devices for a variety of applications need to be powered. Energy harvesting produces electric power from surrounding energy and is the key to powering many IoT devices. A triboelectric nanogenerator (TENG) is a newly-introduced device that harvests electric energy from vibrational energy using the principle of electrostatic energy. Here, the characteristics of the TENG are determined to model and simulate under realistic operation using derating factors. Simulations using the ideal TENG’s circuit model diverge significantly from the actual experimental results. Thus, derating factors are introduced to minimize error between simulation and experimental results. Derating factors of the internal voltage source and the capacitor of the TENG are defined and swept over a range of values to find the values that best fit to the experimental results. For the contact-mode TENG, a voltage derating of 0.0054 and capacitor derating value of 1 resulted in the lowest error in terms of power output. The comparison of the simulation and experiment shows that the they are matched with an error of 1.14×10<SUP>-13</SUP> A for current, 0.157 V for voltage, and 3.81×10<SUP>-13</SUP> W for power.

Contents

Abstract
I. INTRODUCTION
II. TENG CIRCUIT MODEL
III. EXPERIMENTAL MEASUREMENTS
IV. TENG SIMULATION
V. SIMULATION AND EXPERIMENT COMPARISON
VI. CONCLUSIONS
REFERENCES

References (0)

Add References

Recommendations

It is an article recommended by DBpia according to the article similarity. Check out the related articles!

Related Authors

Recently viewed articles

Comments(0)

0

Write first comments.