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이 논문의 연구 히스토리 (7)
2010
2009
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초록· 키워드
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A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.
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참고문헌 (14)
참고문헌 신청
E. Lee / 2005 / Wafer level lateral bonding scheme with LEGO-like structure / SENSORS AND MATERIALS 16(5) (5) : 227 ~ 236
G. W. Dahlmann / 2001 / High Q achieved in microwave inductors fabricated by parallel self-assembly / Proc. 11th Int. Conf. on Solid-State Sensors and Actuators : 1098 ~ 1101
H. A. C. Tilmans / 2003 / MEMS for wireless communications:‘from RF-MEMS components to RF MEMS SiP’ / Journal of Micromechanics and Microengineering 13 (4) : 139 ~ 163
J. C. Chiao / 1999 / MEMS reconfigurable Vee antenna / IEEE MTT-S Int.Microw. Symp : 1515 ~ 1518
J. H. Park / 2005 / Deep dry etching of borosilicate glass using SF6 andSF6/Ar inductively coupled plasmas / MicroelectronicsEngineering 82 (2) : 119 ~ 128
G. W. Dahlmann / 2001 / High Q achieved in microwave inductors fabricated by parallel self-assembly / Proc. 11th Int. Conf. on Solid-State Sensors and Actuators : 1098 ~ 1101
H. A. C. Tilmans / 2003 / MEMS for wireless communications:‘from RF-MEMS components to RF MEMS SiP’ / Journal of Micromechanics and Microengineering 13 (4) : 139 ~ 163
J. C. Chiao / 1999 / MEMS reconfigurable Vee antenna / IEEE MTT-S Int.Microw. Symp : 1515 ~ 1518
J. H. Park / 2005 / Deep dry etching of borosilicate glass using SF6 andSF6/Ar inductively coupled plasmas / MicroelectronicsEngineering 82 (2) : 119 ~ 128
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