지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
초록· 키워드
오류제보하기
A microphone for fully implantable hearing device was generally implanted under the skin of the temporal bone. So, the implanted microphone’s characteristics can be affected by the accompanying noise due to masticatory movement. In this paper, the implantable microphone with 2-channels structure was designed for reduction of the generated noise signal by masticatory movement. And an experimental model for generation of the noise by masticatory movement was developed with considering the characteristics of human temporal bone and skin. Using the model, the speech signal by a speaker and the artificial noise by a vibrator were supplied simultaneously into the experimental model, the electrical signals were measured at the proposed microphone. The collected signals were processed using a general adaptive filter with least mean square(LMS) algorithm. To confirm performance of the proposed methods, the correlation coefficient and the signal to noise ratio(SNR) before and after the signal processing were calculated. Finally, the results were compared each other.
목차
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참고문헌 (12)
참고문헌 신청
A. A. Seshia / 2002 / A vacuum packaged surface micromachined resonant accelerometer / J. Microelectromech. Syst. 11 (6) : 784 ~ 793
C. A. Choi / 1999 / Stress characteristics of multilayer polysilicon for the fabrication of micro resonators / J. Kor. Sensors Soc. 8 (1) : 53 ~ 62
L. He / 2008 / A CMOS readout circuit for SOI resonant accelerometer with 4-μg bias stability and 20-μg/√Hz resolution / IEEE J. Solid-State Circuits 43 : 1480 ~ 1490
N. Barbour / 2001 / Inertial sensor technology trends / IEEE Sensors Journal 1 (4) : 332 ~ 339
N. Yazdi / 1998 / Micromachined inertial sensors / Proc. IEEE 86 (8) : 1640 ~ 1659
C. A. Choi / 1999 / Stress characteristics of multilayer polysilicon for the fabrication of micro resonators / J. Kor. Sensors Soc. 8 (1) : 53 ~ 62
L. He / 2008 / A CMOS readout circuit for SOI resonant accelerometer with 4-μg bias stability and 20-μg/√Hz resolution / IEEE J. Solid-State Circuits 43 : 1480 ~ 1490
N. Barbour / 2001 / Inertial sensor technology trends / IEEE Sensors Journal 1 (4) : 332 ~ 339
N. Yazdi / 1998 / Micromachined inertial sensors / Proc. IEEE 86 (8) : 1640 ~ 1659
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