Understanding radiation effects in SRAM-based fi eld programmable gate arrays for implementing instrumentation and control systems of nuclear power plants

T.S. Nidhin; Anindya Bhattacharyya; R.P. Behera; T. Jayanthi; K. Velusamy

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저자정보: T.S. Nidhin Anindya Bhattacharyya R.P. Behera T. Jayanthi K. Velusamy

저널정보: 한국원자력학회 Nuclear Engineering and Technology Nuclear Engineering and Technology 제49권 제8호

발행연도: 2017.1

수록면: 1,589 - 1,599 (11page)

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Field programmable gate arrays (FPGAs) are getting more attention in safety-related and safety-criticalapplication development of nuclear power plant instrumentation and control systems. The high logicdensity and advancements in architectural features make static random access memory (SRAM)-basedFPGAs suitable for complex design implementations. Devices deployed in the nuclear environmentface radiation particle strike that causes transient and permanent failures. The major reasons for failuresare total ionization dose effects, displacement damage dose effects, and single event effects. Differentfrom the case of space applications, soft errors are the major concern in terrestrial applications. In thisarticle, a review of radiation effects on FPGAs is presented, especially soft errors in SRAM-based FPGAs. Single event upset (SEU) shows a high probability of error in the dependable application development inFPGAs. This survey covers the main sources of radiation and its effects on FPGAs, with emphasis on SEUsas well as on the measurement of radiation upset sensitivity and irradiation experimental results atvarious facilities. This article also presents a comparison between the major SEU mitigation techniques inthe configuration memory and user logics of SRAM-based FPGAs.

#Configuration Memory #Fault Tolerance #FPGAs #Nuclear Power Plant I& #amp #C Systems #Radiation Effects #Single Event Effects #Single Event Upset #SEU Mitigation #Soft Errors #TID Effects

참고문헌 (29)

참고문헌 신청

/ / IAEA Nuclear Energy Series No. NP-T-3.17, Application of Field Programmable Gate Arrays in Instrumentation and Control Systems of Nuclear Power Plants

/ / Particle Radiation effect Mitigation Techniques in FPGAs: Synopsys application note

/ / Xilinx Device Reliability Report, UG116 (v10.6.1)

/ 2009 / Three-dimensional Integrated Circuits / U.S Patent 7,538,575. B

B. Djezzar / 2000 / Channel-length Impact on Radiation-Induced threshold-voltage shift in N-MOSFET’s devices at low Gamma Rays Radiation doses / IEEE Trans. Nucl. Sci 47 (6

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