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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제13권 제2호
- 발행연도
- 2012.1
- 수록면
- 69 - 72 (4page)
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In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with CH3 group into the Si-OSi cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 cm-1 corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of 10-11 A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.
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