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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제14권 제5호
- 발행연도
- 2013.1
- 수록면
- 246 - 249 (4page)
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Graphene was obtained on Cu foil by thermal decomposition method. A gas mixture of H2 and CH4 and an ambient annealing temperature of 1,000℃ were used during the deposition for 30 Min., and for the transfer onto SiO2/Si and Si substrates. The physical properties of graphene were investigated with regard to the effect ofnitrogen atom doping and the various substrates used. The G/2D ratio decreased when the graphene became monolayer graphene. The graphene grown on SiO2/Si substrate showed a low intensity of the G/2D ratio, because the polarity of the SiO2 layer improved the quality of graphene. The intensity of the G/2D ratio of graphene doped with nitrogen atoms increased with the doping time. The quality of graphene depended on the concentration of the nitrogen doping and chemical properties of substrates. High-quality monolayer graphene was obtained with a low G/2D ratio. The increase in the intensity of the G/2D ratios corresponded to a blue shift in the 2D peaks.
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