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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제13권 제3호
- 발행연도
- 2012.1
- 수록면
- 157 - 161 (5page)
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초록· 키워드
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In this study, we investigated the etching characteristics of ITO thin films and the effects of inert gases added to Cl2/BCl3 inductivity coupled plasma. The maximum etch rate of ITO thin film was 130.0 nm/min upon the addition of Ar (6 sccm) to the Cl2/BCl3 (4:16 sccm) plasma, which was higher than that with He or N2 added to the plasma. The ion bombardment by Ar+ sputtering was due to the relatively low volatility of the by-products formed in the Cl2/BCl3 (4:16sccm) plasma. The surface of the etched ITO thin film was characterized by x-ray photoelectron spectroscopy (XPS)and atomic force microscopy (AFM). From the XPS results, it is concluded that the proper addition of Ar and He to the Cl2/BCl3 plasma removes carbon and by-products from the surface of the etched ITO thin film.
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참고문헌 (16)
참고문헌 신청
A. Grigonis / 2003 / / Vacuum 70 : 319 ~
A. M. Efremov / 2008 / / Thin Solid Films 516 : 3020 ~
Chan-Soo Lee / 2011 / Effect of MIM and n-Well Capacitors on Programming Characteristics of EEPROM / Transactions on Electrical and Electronic Materials 12 (1) : 35 ~ 39
D. Y. Kim / 2008 / / Thin Solid Films 516 : 3512 ~
G. H. Kim / 2005 / / Vacuum 79 : 231 ~
A. M. Efremov / 2008 / / Thin Solid Films 516 : 3020 ~
Chan-Soo Lee / 2011 / Effect of MIM and n-Well Capacitors on Programming Characteristics of EEPROM / Transactions on Electrical and Electronic Materials 12 (1) : 35 ~ 39
D. Y. Kim / 2008 / / Thin Solid Films 516 : 3512 ~
G. H. Kim / 2005 / / Vacuum 79 : 231 ~
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