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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제15권 제1호
- 발행연도
- 2014.1
- 수록면
- 32 - 36 (5page)
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In this study, the etching characteristics of titanium dioxide (TiO2) thin films were investigated with the addition ofN2 to CF4/Ar plasma. The crystal structure of the TiO2 was amorphous. A maximum etch rate of 111.7 nm/min andselectivity of 0.37 were obtained in an N2/CF4/Ar (= 6:16:4 sccm) gas mixture. The RF power was maintained at 700W, the DC-bias voltage was - 150 V, and the process pressure was 2 Pa. In addition, the etch rate was measured asfunctions of the etching parameters, such as the gas mixture, RF power, DC-bias voltage, and process pressure. Weused X-ray photoelectron spectroscopy to investigate the chemical state on the surface of the etched TiO2 thin films.
To determine the re-deposition and reorganization of residues on the surface, atomic force microscopy was used toexamine the surface morphology and roughness of TiO2 thin films.
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