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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제12권 제2호
- 발행연도
- 2011.1
- 수록면
- 51 - 55 (5page)
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We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of Cl_2, Ar, and O_(2·) The maximum etch rate was 40.3 nm/min at a gas flow ratio of Cl_2/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the O_2/Cl_2/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91nm to 2.45 nm after etching in the O_2/Cl_2/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased.
However, there was no deep level emission.
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