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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제15권 제5호
- 발행연도
- 2014.1
- 수록면
- 262 - 264 (3page)
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Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hotwalledpulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzingthe optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time,gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter andlength of pristine and doped ZnO NWs were controlled under 200 nm and several μm, respectively. Low temperaturephotoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shiftof the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the centerphoton energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donorboundexciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs.
X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to theinteraction between the metal ion and ZnO NWs.
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