지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
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The microstructure of various shapes of stacking fault pyramids (SFPs) formed in multiple implant/anneal Separation by Implanted Oxygen (SIMOX) material were investigated by plan-view and cross-sectional transmission electron microscopy. In the multiple implant/anneal SIMOX, the defects in the top silicon layer are confined at the interface of the buried oxide layer at a density of ~106 cm-2. The dominant defects are perfect and imperfect SFPs. The perfect SFPs were formed by the expansion and interaction of four dissociated dislocations on the {111} pyramidal planes. The imperfect SFPs show various shapes of SFPs, including I-, L-, and Y-shapes. The shape of imperfect SFPs may depend on the number of dissociated dislocations bounded to the top of the pyramid and the interaction of Shockley partial dislocations at each edge of {111} pyramidal planes.
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참고문헌 (12)
참고문헌 신청
Cheek T F / 1988 / Dislocation reduction on SIMOX substrates by using multiple implants / MRS Proceedings 107 : 53 ~
Crean G M / 1992 / Feasibility of SIMOX material quality determination usingspectroellipsometry: comparison with Raman and planar viewtransmission electron microscopy / MRS Proceed
El-Ghor M K / 1990 / Formation of low dislocation density silicon-on-insulator by a single implantation and annealing / Appl. Phy. Lett 57 : 156 ~
Hill D / 1988 / The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing / J. Appl. Phys 63 : 4922 ~
Hirth J P / 1982 / Theory of Dislocations / Wiley
Crean G M / 1992 / Feasibility of SIMOX material quality determination usingspectroellipsometry: comparison with Raman and planar viewtransmission electron microscopy / MRS Proceed
El-Ghor M K / 1990 / Formation of low dislocation density silicon-on-insulator by a single implantation and annealing / Appl. Phy. Lett 57 : 156 ~
Hill D / 1988 / The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing / J. Appl. Phys 63 : 4922 ~
Hirth J P / 1982 / Theory of Dislocations / Wiley
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