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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.24 No.6
- 발행연도
- 2015.11
- 수록면
- 268 - 272 (5page)
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초록· 키워드
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We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an SiO₂/Si substrate is spontaneously p-doped. The extent of p-doping from the SiO₂ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experimental
Ⅱ. Results and Discussion
Ⅳ. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2019-420-001275815