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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.26 No.4
- 발행연도
- 2017.7
- 수록면
- 55 - 61 (7page)
이용수
초록· 키워드
오류제보하기
Graphene, with a carrier mobility achieving up to 140,000 cm<SUP>2</SUP>/Vs at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Formation of Defects by Particle Irradiation
Ⅲ. Formation of Covalent Contacts by Annealing
Ⅳ. Formation of Edge Contacts by O₂ Plasma Treatment
Ⅴ. Patterning the Graphene at the Device Interface
Ⅵ. Conclusions
References
참고문헌 (57)
참고문헌 신청
F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, Nat. Photon. 4, 611 (2010).
R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. Peres, and A. K. Geim, Science. 320, 1308 (2008).
D. Prezzi, D. Varsano, A. Ruini, A. Marini, and E. Molinari, Phys.
[학술지(정기간행물)] - F. Bonaccorso / 2010 / / Nat. Photon 4 : 611 ~
[학술지(정기간행물)] - R. R. Nair / 2008 / / Science 320 : 1308 ~
[학술지(정기간행물)] - R. R. Nair / 2008 / / Science 320 : 1308 ~
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