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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.25 No.5
- 발행연도
- 2016.9
- 수록면
- 98 - 102 (5page)
이용수
초록· 키워드
오류제보하기
The level set method has recently become popular in the simulation of semiconductor processes such as etching, deposition and photolithography, as it is a highly robust and accurate computational technique for tracking moving interfaces. In this research, full three-dimensional level set simulation has been developed for the investigation of focused ion beam processing. Especially, focused ion beam induced nanodot formation was investigated with the consideration of three-dimensional distribution of redeposition particles which were obtained by Monte-Carlo simulation. Experimental validations were carried out with the nanodots that were fabricated using focused Ga⁺ beams on Silicon substrate. Detailed description of level set simulation and characteristics of nanodot formation will be discussed in detail as well as surface propagation under focused ion beam bombardment.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Full Three Dimensional Level set Simulation
Ⅲ. Experiment
Ⅳ. Results and Discussion
Ⅴ. Conclusions
References
참고문헌 (23)
참고문헌 신청
[학술지(정기간행물)] - A. A. Tseng / 2003 / / J. Micromech. Microeng 14 : R15 ~
[학술지(정기간행물)] - S. Reyntjens / 2001 / / J. Micromech. Microeng 11 : 287 ~
[학술지(정기간행물)] - R. Young / 1993 / / Vacuum 44 : 353 ~
[학술지(정기간행물)] - M. J. Vasile / 1997 / / J, Vac, Sci, Technol B 15 : 2350 ~
[학술지(정기간행물)] - M. J. Vasile / 1999 / / J. Vac. Sci. Technol. B 17 : 3085 ~
[학술지(정기간행물)] - S. Reyntjens / 2001 / / J. Micromech. Microeng 11 : 287 ~
[학술지(정기간행물)] - R. Young / 1993 / / Vacuum 44 : 353 ~
[학술지(정기간행물)] - M. J. Vasile / 1997 / / J, Vac, Sci, Technol B 15 : 2350 ~
[학술지(정기간행물)] - M. J. Vasile / 1999 / / J. Vac. Sci. Technol. B 17 : 3085 ~
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UCI(KEPA) : I410-ECN-0101-2019-420-001276170