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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.28 No.1
- 발행연도
- 2019.1
- 수록면
- 9 - 12 (4page)
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초록· 키워드
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InAs/GaAs submonolayer quantum dots (SML-QD) were investigated by temperature dependent photoreflectance (PR) spectroscopy. To investigate the optical properties of SML-QD, GaAs and InAs SML-QD related PR spectra were monitored at different temperatures. Two notable signals were observed in the SML-QD and GaAs regions. The PR spectra of SML-QD region were interpreted by the third-derivative functional form method. We observe the oscillatory signal above the GaAs band gap energy (E<SUB>g</SUB>) due to the Franz-Keldysh effect caused by an interface electric field (F). At room temperature, the PR transition of SML-QD was obtained at near ~1.3 eV with a broadening of 29.5 meV. The F was obtained from the Aspnes’ numerical PR analysis. The F was changed from 14 to 12 kV/cm by decreasing the temperature from 300 to 140 K causing a thermal induced carrier distribution near the interfaces.
목차
Abstract
I. Introduction
II. Theoretical models
III. Experimental details
IV. Results and analysis
V. Conclusions
References
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UCI(KEPA) : I410-ECN-0101-2019-420-001277339