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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Journal of Korean Vacuum Science & Technology Journal of Korean Vacuum Science & Technology Vol.2 No.1
- 발행연도
- 1998.4
- 수록면
- 13 - 19 (7page)
이용수
초록· 키워드
오류제보하기
We have calculated the electronic structure of impurity atoms in metal host by using the tight binding model in the recursion method. For a self-consistent calculation, we assumed that the effect of impurity introduction was localized only at the impurity site and its neighbours. We calculated the Madelung term by limiting the contribution to V_M of the charge perturbations to the first shell around the impurity with Evjen technique. The calculated local density of states and charge transfer values have been compared with the experimental values for a single impurity in metal host. We found that d-resonance state came from the repulsive interaction between impurity d-state and host band, and the position of d-resonance state depended on the difference of valence electrons between the host and the impurity. The results also showed that the charge transfer value between an impurity and host metal was comparable to the ionicity difference between them.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Calculation
Ⅲ. Results
Ⅳ. Conclusion
References
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