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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 한국진공학회(ASCT) Applied Science and Convergence Technology Applied Science and Convergence Technology Vol.26 No.3
- 발행연도
- 2017.5
- 수록면
- 43 - 46 (4page)
이용수
초록· 키워드
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Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide (H₂O₂) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.
목차
Abstract
Ⅰ. Introduction
Ⅱ. Experiment
Ⅲ. Result and Discussion
Ⅳ. Conclusions
References
참고문헌 (11)
참고문헌 신청
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E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, Adv. Mater 17, 590 (2005).
W. J. Maeng, J. W. Lee, J. H. Lee, K. B. Chung, and J. S. Park, J. Phys. D: Appl. Phys. 44, 445305 (2011).
M. Tadatsugu, Semicond. Sci. Technol. 20, S35 (2005).
Y. C. Lin, Y. C. Jian, and J. H. Jiang, Appl. Surf. Sci. 254, 2671 (2008).
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