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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2020.1
- 수록면
- 1,537 - 1,544 (8page)
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Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) with inject direction of [0001]. The results of MD simulations showed that threshold displacement energy (Ed) was affected by temperatures and at higher temperature, it was larger. The evolutions of defects under various temperatures were similar. However, the higher temperature was found to increase the peak number, peak time, final time and recombination efficiency while decreasing the final number. With regard to clusters, isolated point defects and little clusters were common clusters and the fraction of point defects increased with temperature for vacancy clusters, whereas it did not appear in the interstitial clusters. Finally, at each temperature, the number of Ga interstitial atoms was larger than that of N and besides that, there were other different results of specific types of split interstitial atoms.
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참고문헌 (31)
참고문헌 신청
S. Pearton / 2012 / GaN and ZnO-Based Materials and Devices / Springer Science &Business Media
A. P. Karmarkar / 2005 / Proton-induced damage in gallium nitride-based Schottky diodes / IEEE Trans. Nucl. Sci 52:2239~2244
M. P. Khanal / 2018 / Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors(HEMTs) / J. Appl. Phys 124:215702
H. Y. Xiao / 2009 / Threshold displacement energy in GaN : ab initio molecular dynamics study / J. Appl. Phys 105:123527
H. Y. Xiao / 2008 / Ab initio calculations of structural and energetic properties of defects in gallium nitride / J. Appl. Phys 103:123529
A. P. Karmarkar / 2005 / Proton-induced damage in gallium nitride-based Schottky diodes / IEEE Trans. Nucl. Sci 52:2239~2244
M. P. Khanal / 2018 / Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors(HEMTs) / J. Appl. Phys 124:215702
H. Y. Xiao / 2009 / Threshold displacement energy in GaN : ab initio molecular dynamics study / J. Appl. Phys 105:123527
H. Y. Xiao / 2008 / Ab initio calculations of structural and energetic properties of defects in gallium nitride / J. Appl. Phys 103:123529
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