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논문 기본 정보

자료유형
학술대회자료
저자정보
Hu, Tarng-Shiang (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Wang, Yi-Kai (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Peng, Yu-Rung (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Yang, Tsung-Hua (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Chiang, Ko-Yu (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Lo, Po-Yuan (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Chang, Chih-Hao (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Hsu, Hsin-Yun (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Chou, Chun-Cheng (Electronics & Optoelectronics Research Laboratories [EOL]/Industrial Technology Research Institute [ITRI]) Hsieh, Yen-Min (Electronics & Optoelectronic) Liu, Chueh-Wen Hu, Jupiter
저널정보
한국정보디스플레이학회 한국정보디스플레이학회 International Meeting 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
발행연도
2009.1
수록면
421 - 427 (7page)

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We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

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