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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2011.1
- 수록면
- 61 - 64 (4page)
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In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.
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참고문헌 (10)
참고문헌 신청
Korea Institute of Energy Research / 2011 / 2011 workshop of association for research on PV :1~122
Korea Photovoltaic Industry Association / 2011 / PV World Forum 2011: 1stDay – Conference Data Book / Infothe :9~188
Seung Woo Do / 2010 / Formation and Characteristics of a Shallow Junction using Plasma Doping :24~56
Yong Hyun Lee / 2008 / N+/P+ poly counter doping and 30nm shallow junction formation using Plasma Immersion Ion Doping(PI2D) :14~26
Y. H. Kim / 2009 / Introduction to Solar Cell Production / Dooyangsa :9~313
Korea Photovoltaic Industry Association / 2011 / PV World Forum 2011: 1stDay – Conference Data Book / Infothe :9~188
Seung Woo Do / 2010 / Formation and Characteristics of a Shallow Junction using Plasma Doping :24~56
Yong Hyun Lee / 2008 / N+/P+ poly counter doping and 30nm shallow junction formation using Plasma Immersion Ion Doping(PI2D) :14~26
Y. H. Kim / 2009 / Introduction to Solar Cell Production / Dooyangsa :9~313
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