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논문 기본 정보

자료유형
학술저널
저자정보
이동원 (한국생산기술연구원 금형기술그룹) 하석재 (한국생산기술연구원 금형기술그룹) 박정연 (한국생산기술연구원 금형기술그룹) 윤길상 (한국생산기술연구원 금형기술그룹)
저널정보
한국금형공학회 한국금형공학회지 한국금형공학회지 제13권 제4호
발행연도
2019.1
수록면
10 - 16 (7page)

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Semiconductor chip is bonded to the substrate by melting solder bumps. In general, the chip bonding is applied by a Reflow process or a Thermo-Compression(TC) bonding process. In this paper, we introduce a Laser Assisted Thermo-Compression bonding (LATCB) process to improve the anxiety of the existing process(Reflow, TC bonding). In the LATCB process, the chip is bonded to the substrate by irradiating a laser with a uniform energy density in the same area as the chip to melt only the solder bumps and press the chip with a Transparent Compression Module (TCM). The TCM consists of a fused silica header for penetrating the laser and pressurizing the chip, and a piezoelectric actuator (P.A.) coupled to both ends of the header for micro displacement control of the header. In addition, TCM is a structure that can pressurize the chip and deliver it to the chip and solder bumps without losing the energy of the laser. Fused silica, which is brittle, is vulnerable to deformation, so the header may be damaged when an external force is applied for pressurization or a displacement differenced is caused by piezoelectric actuators at both ends. On the other hand, in order to avoid interference between the header and the adjacent chip when pressing the chip using the TCM, the header has a notch at the bottom, and breakage due to stress concentration of the notch is expected. In this study, the thickness and notch length that the header does not break when the external force (500 N) is applied to both ends of the header are optimized using structural analysis and Coulomb-Mohr failure theory. In addition, the maximum displacement difference of the P.A.s at both ends where no break occurred in the header was derived. As a result, the thickness of the header is 11 mm, and the maximum displacement difference between both ends is 8 um.

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