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논문 기본 정보

자료유형
학술저널
저자정보
Suryawanshi, Mahesh P. (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University) Kim, Seonghyeop (R & D Division, Feelstone Inc.) Ghorpade, Uma V. (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University) Suryawanshi, Umesh P. (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University) Jang, Jun Sung (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University) Gang, Myeng Gil (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University) Kim, Jin Hyeok (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University) Moon, Jong Ha (Optoelectronic Convergence Research Center, Department of Material Science and Engineering, Chonnam National University)
저널정보
한국재료학회 한국재료학회지 한국재료학회지 제27권 제11호
발행연도
2017.1
수록면
631 - 635 (5page)

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We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

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