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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2018.1
- 수록면
- 209 - 211 (3page)
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A zinc oxide thin film doped with aluminum was deposited by RF sputtering. The deposition temperature of the sputter chamber was kept constant at $350^{\circ}C$, the power supplied to the chamber was 75 W, the oxygen flow rate was changed to 10 sccm and 20 sccm, and the thin film deposition time was changed to 120 and 180 minutes. The structures of the deposited zinc oxide thin films were analyzed by van der Waals method using an X-ray diffractometer. As a result of X-ray diffraction, the amount of oxygen supplied to the zinc oxide thin film increased, and the surface growth of the (002), (400), (110), and (103) planes showed a change with increasing deposition time. Moreover, as the amount of oxygen supplied to the zinc oxide thin film increased, their shape was observed to be coarse, and the thin film' s particles shape was correlated with the oxygen chemical defect introduced.
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