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논문 기본 정보

자료유형
학술저널
저자정보
Yunchen Dou (Shanghai Institute of Technology) Qiqi Zhu (Shanghai Institute of Technology) Yong Du (Shanghai Institute of Technology) Jiayue Xu (Shanghai Institute of Technology) Di Li (Chinese Academy of Sciences)
저널정보
대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.16 No.2
발행연도
2020.1
수록면
99 - 105 (7page)

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초록· 키워드

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The thermoelectric properties of alkali-ion-doped compounds Cu 3 Sb 1− x M x Se 4 (M = Na and K) prepared by mechanicalalloying and spark plasma sintering compaction, are investigated systematically between 300 K and 673 K. The increase inthe hole carrier concentration causes a reduction in the electrical resistivity in the whole temperature range and a rise in thepower factor at elevated temperature for alkali-ion-doped compounds as compared to pristine Cu 3 SbSe 4 . For example, themaximum power factors for Cu 3 Sb 1− x Na x Se 4 ( x = 0.02 and 0.03) and Cu 3 Sb 0.99 K 0.01 Se 4 at 673 K are all increased by around1.6 times compared to the un-doped sample. As a result, the peak ZT value reaches 0.52 and 0.71 at 673 K for Cu 3 Sb 1− x Na x Se 4( x = 0.02 and 0.03) and Cu 3 Sb 0.99 K 0.01 Se 4 , which is 27% and 73% larger than that (0.41) of the un-doped sample, respectively. In this work, K-doping is more eff ective in improving thermoelectric performance of Cu 3 SbSe 4 , due to its larger ionic radius,which can bring more lattice distortions and point defects to scatter phonons than Na-doping.

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