Generation of Charged SiC Nanoparticles During HWCVD Process

Daseul Kim; Du Yun Kim; Ji Hye Kwon; Kun‑Su Kim; Nong‑Moon Hwang

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자료유형: 학술저널

저자정보: Daseul Kim (Seoul National University) Du Yun Kim (Seoul National University) Ji Hye Kwon (Seoul National University) Kun‑Su Kim (Seoul National University) Nong‑Moon Hwang (Seoul National University)

저널정보: 대한금속·재료학회 Electronic Materials Letters Electronic Materials Letters Vol.16 No.5

발행연도: 2020.1

수록면: 498 - 505 (8page)

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Charged nanoparticles have been shown to be spontaneously generated in the gas phase in various chemical vapor deposition(CVD). Furthermore, it has been shown that these charged nanoparticles can contribute to the growth of thin films,nanowires, nanotetrapods and so on. Here, the generation of charged silicon carbide (SiC) nanoparticles in the gas phaseduring a hot wire CVD process was studied by capturing nanoparticles with a different delay time on a silicon monoxidemembrane of the copper mesh grid for transmission electron microscope. The average size of SiC nanoparticles capturedfor 30 s increased from 2.9 to 6.1 nm with increasing delay time from 0 to 60 min. The deposition behavior of SiC filmswas affected by the applied bias on a substrate holder. A homo-epitaxial SiC film as thick as ~ 200 nm was grown under thesubstrate bias of − 200 V, whereas polycrystalline SiC films were grown under 0 V and + 15 V. It indicates that nanoparticlesgenerated in the gas phase should be charged.

#SiC · Hot wire CVD · Nanoparticles · Epitaxial SiC deposition · DC electric bias

참고문헌 (31)

참고문헌 신청

Hwang, N.-M / 2004 / Charged clusters in thin film growth / Int. Mater. Rev 49(3?4):171~190

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Henry Teng, H. / 2013 / How ions and molecules organize to form crystals / Elements 9(3):189~194

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