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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2016.1
- 수록면
- 399 - 403 (5page)
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The growth of quality Cu(In,Ga)Se2 photovoltaic absorber withoutsecondary phases is very important for improving the solar cellefficiency. Although X-ray diffraction (XRD), X-ray photoelectronspectroscopy (XPS) and Raman spectroscopy can identify the secondaryphases, they provide insufficient information because of theirinsufficient resolution and complexity in analysis. In general, normalRaman spectroscopy is better for the analysis of secondary phases. Onthe other hand, the Raman signal provides information for film depths ofless than 300 nm, and the Raman information cannot represent theproperties of the entire film. In this regard, the authors introduce a newway of identifying secondary phases in Cu(In,Ga)Se2 films using depthRaman analysis. The as-prepared film was polished using a dimplegrinder, which expanded a 2 μm thick film to approximately 1 mm,which is more than sufficient to resolve the depth distribution. Ramananalysis indicated that the Cu(In,Ga)Se2 film showed different secondaryphases, such as CuIn3Se5, InSe and CuSe, present in different depths ofthe film, whereas XPS provided complex information about the phases. Overall, the present study emphasizes that the Raman depth profile ismore efficient for the identification of secondary phases in Cu(In,Ga)Se2thin films than XPS and XRD.
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