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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2017.1
- 수록면
- 302 - 306 (5page)
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초록· 키워드
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A 1.5 μm gate AlInN:Mg/GaN HEMT, exhibiting a maximum draincurrent (IDS,max) of 700 mA/mm at a gate bias voltage (VGS) of 0 V and amaximum transconductance (gm,max) of 190 mS/mm at drain-sourcevoltage (VDS) of 5 V, was analyzed at temperatures ranging from 210 K to420 K. It was found that IDS,max and gm,max have weak temperaturedependence with a power-law relation of ~T−0.5, owing to suppressedoptical phonon scattering. The threshold voltage (Vth) was found to bestable under increasing temperatures owing to the use of a semi-insulatingAlInN:Mg barrier. This indicates that AlInN:Mg/GaN HEMTs arepromising candidates for high-temperature electronics applications.
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참고문헌 (25)
참고문헌 신청
T. Nanjo / 2008 / Appl. Phys. Express 1:011101
J. Kuzmik / 2006 / IEEE T. Electron. Dev 53:422
Palash Das / 2014 / Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2-Dimensional Electron Gas Carrier Concentration and Mobility / Electronic Materials Letters 10(6):1087~1092
T. -T. Luong / 2015 / Electron. Mater. Lett 11:217
Apurba Chakraborty / 2016 / Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure / Electronic Materials Letters 12(2):232~236
J. Kuzmik / 2006 / IEEE T. Electron. Dev 53:422
Palash Das / 2014 / Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2-Dimensional Electron Gas Carrier Concentration and Mobility / Electronic Materials Letters 10(6):1087~1092
T. -T. Luong / 2015 / Electron. Mater. Lett 11:217
Apurba Chakraborty / 2016 / Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure / Electronic Materials Letters 12(2):232~236
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