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학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
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In this paper, we have reported the high sensitive UV detector using ZnO nanowires prepared on porous silicon (PS). The aligned naturally doped n-type zinc oxide (ZnO) nanowires were grown on both PS and n-Si(100) substrates to produce isotype heterojunctions using hydrothermal method. The length of the nanowires ranges 3–4 µm and the diameter 150–200 nm. Grown ZnO nanowires on PS substrate has lower reflectivity value compared with Si substrate. The electrical behavior of such devices has been examined at different intensities of UV radiation. The current– voltage curve of the isotype heterojunction shows rectifying behavior in a dark environment. Under UV light, the current was increased by using PS instead of n-Si under reverse bias. The I–V characteristics of the device show a significant rise in the current for low intensity of UV radiation evidencing the high sensitivity of the reported structure. The sensitivity for such devices is obtained, 2.2 x 10 3, 0.47 x 10 3 and 0.21 x 10 3 at UV radiation of 1.5 mW/cm2 intensity at bias voltage of -0.75 V for three proposed structures. The samples have been analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate their structures and geometries.
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