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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2016.2
- 수록면
- 125 - 129 (5page)
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In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers onc-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Highresolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope(SEM) and Raman scattering measurements have been exploited to study the crystal quality, surfacemorphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertionof an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of theHT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. Themechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleationlayer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.
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참고문헌 (22)
참고문헌 신청
S. Nuttinck / 2002 / Development of GaN wide bandgap technology for microwave power applications / IEEE Microw. Mag 3:80~87
M. Kuzuhara / 2003 / High-voltage rf operation of AlGaN/GaN heterojunction FETs / Phys. Stat. Sol. A 200:161~167
Dang-Hui Wang / 2012 / Growth of InGaN Films on c-plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-organic Chemical-Vapor Deposition / Journal of the Korean Physical Society 61(4):618~622
M. Iwaya / 2002 / Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN / J. Cryst. Growth 951:237~239
Z. Y. Lin / 2012 / Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition / Chin. Phys. B 21:126804
M. Kuzuhara / 2003 / High-voltage rf operation of AlGaN/GaN heterojunction FETs / Phys. Stat. Sol. A 200:161~167
Dang-Hui Wang / 2012 / Growth of InGaN Films on c-plane Sapphire Substrates with an AlN Nucleation Layer by Using Metal-organic Chemical-Vapor Deposition / Journal of the Korean Physical Society 61(4):618~622
M. Iwaya / 2002 / Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN / J. Cryst. Growth 951:237~239
Z. Y. Lin / 2012 / Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemical vapour deposition / Chin. Phys. B 21:126804
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