지원사업
학술연구/단체지원/교육 등 연구자 활동을 지속하도록 DBpia가 지원하고 있어요.
커뮤니티
연구자들이 자신의 연구와 전문성을 널리 알리고, 새로운 협력의 기회를 만들 수 있는 네트워킹 공간이에요.
논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 발행연도
- 2019.12
- 수록면
- 516 - 521 (6page)
이용수
초록· 키워드
오류제보하기
The electrical leakage levels of GaN-based light-emitting diodes (LEDs) containing leakage paths are estimated using photoluminescence (PL) and photovoltaic properties under photoexcitation conditions. The PL intensity and open-circuit voltage (V<SUB>OC</SUB>) decrease because of carrier leakages depending on photoexcitation conditions when compared with reference values for typical LED chips without leakage paths. Changes of photovoltage-photocurrent characteristics and PL intensity due to carrier leakage are employed to assess the leakage current levels of LEDs with leakage paths. The current corresponding to the reduced V<SUB>OC</SUB> of an LED with leakage from the photovoltaic curve of a reference LED without leakage is matched with the leakage current calculated using the PL intensity reduction ratio and short-circuit current of the LED with leakage. The current needed to increase the voltage for an LED with a leakage under photoexcitation from V<SUB>OC</SUB> of the LED up to V<SUB>OC</SUB> of a reference LED without a leakage is identical to the additional current needed for optical turn-on of the LED with a leakage. The leakage current level estimated using the PL and photovoltaic properties under photoexcitation is consistent with the leakage level measured from the voltage-current characteristic obtained under current injection conditions.
목차
I. INTRODUCTION
II. EXPERIMENTAL
III. RESULTS AND DISCUSSION
IV. SUMMARY
REFERENCES
참고문헌 (25)
참고문헌 신청
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M. Anandan / 2008 / Progress of LED backlights for LCDs / J. Soc. Inf. Disp 16:287~310
T. Wu / 2018 / Mini-LED and micro-LED : Promising candidates for the next generation display technology / Appl. Sci 8:1557
C. J. Raymond / 2013 / Photoluminescence metrology for LED characterization in high volume manufacturing / Proc. SPIE 8681:86810P
Y. H. Aliyu / 1997 / A luminescence mapping technique for rapid evaluation of visiblelight-emitting materials used in semiconductor light-emitting diodes / Meas. Sci. Technol 8:437
M. Anandan / 2008 / Progress of LED backlights for LCDs / J. Soc. Inf. Disp 16:287~310
T. Wu / 2018 / Mini-LED and micro-LED : Promising candidates for the next generation display technology / Appl. Sci 8:1557
C. J. Raymond / 2013 / Photoluminescence metrology for LED characterization in high volume manufacturing / Proc. SPIE 8681:86810P
Y. H. Aliyu / 1997 / A luminescence mapping technique for rapid evaluation of visiblelight-emitting materials used in semiconductor light-emitting diodes / Meas. Sci. Technol 8:437
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