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초록· 키워드
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The achievable band gap energy and the lattice constant of an epitaxially grown III-V compound semiconductor material is typically determined by the lattice constant of the commercially available single crystal binary substrates such as GaAs or InP. Therefore, it has been a conventional approach to adopt a substrate whose latticemismatch is small enough when epitaxially growing III-V alloys with a specific bandgap energy, as in the case of 1.55 ㎛ semiconductor lasers grown on InP substrate. On the other hand, achieving a high structural and optical quality epitaxial layer grown on a substrate with a large lattice mismatch has been a subject of active research over decades for realizing more advanced optical/electronic devices. This type of epitaxial layers, with a designed lattice constant under significant strain relaxation, is usually called metamorphic buffer layer(MBL). Many research efforts have been directed to achieving MBLs with low dislocation density and smoother surface morphology. In this review article, various types of III-(As,P) based MBLs, their structural properties and its technological trend will be introduced, in addition to characteristics of related optical/electronic devices.
목차
서론
부정규형 성장(pseudomorphic growth mode)과 변성성장 모드(metamorphic growth mode)
맺음말
References
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