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논문 기본 정보
- 자료유형
- 학술저널
- 저자정보
- 저널정보
- 국제구조공학회 Structural Engineering and Mechanics, An Int'l Journal Structural Engineering and Mechanics, An Int'l Journal Vol.82 No.4
- 발행연도
- 2022.5
- 수록면
- 469 - 476 (8page)
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A mathematical model of Lord-Shulman photo-thermal theorem induced by pulse heat flux is presented to study the propagations waves for plasma, thermal and elastic in two-dimensional semiconductor materials. The medium is assumed initially quiescent. By using Laplace-Fourier transforms with the eigenvalue method, the variables are obtained analytically. A semiconductor medium such as silicon is investigated. The displacements, stresses, the carrier density and temperature distributions are calculated numerically and clarified graphically. The outcomes show that thermal relaxation time has varying degrees of effects on the studying fields.
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