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논문 기본 정보

자료유형
학술저널
저자정보
Rahidul Hasan (Korea National University of Transportation) 어순철 (한국교통대학교)
저널정보
한국전기전자재료학회 Transactions on Electrical and Electronic Materials Transactions on Electrical and Electronic Materials 제19권 제2호
발행연도
2018.4
수록면
106 - 111 (6page)
DOI
https://doi.org/10.1007/s42341-018-0024-x

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In the current work, we tried to investigate and compare the thermoelectric performance of the FeVSb 1?x Sn x (x = 0.0?0.05)half-Heusler system. The elemental mixture was formulated and subjected to mechanical alloying, and subsequently consolidatedusing vacuum hot pressing. X-ray diff ractometry analysis was used to observe phase transition during the process,and scanning electron microscopy was utilized for microstructure analysis. After vacuum hot pressing, a near single phaseof FeVSb 1?x Sn x (x = 0.0?0.05) was observed with small portions of second phases. The vacuum hot-pressed sampleswere analyzed to study the thermoelectric properties as a function of temperature up to 980 K. The n-type conduction wasconfi rmed from Seebeck and Hall coeffi cients in the test range. In addition, the electrical conductivity showed combinedconduction behavior in the test range, while the thermal conductivities showed abnormal behavior. Mass fl uctuation scatteringand changing in carrier concentration might have taken place during doping. The Seebeck coeffi cient and electricalconductivity of the system also decreased after doping. Dimensionless fi gure of merit values were calculated and comparedwith the results of analogue studies. The maximum ZT value was obtained for x = 0.01 at 553 K.

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